onsemi FQA24N50

Name: onsemi FQA24N50
Brand: onsemi
SKU: FQA24N50

Power MOSFET, N-Channel, QFET®, 500 V, 24 A, 200 mΩ, TO-3P

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Farnell	2	FQA24N50.	0	1		3.483*	3.483*	2.111*	1.761*	1.761*	23h
element14 APAC		FQA24N50	0	1		6.100*	4.272*	3.475*	2.991*	2.991*	13h
Component Stockers USA		FQA24N50	36,837			1.390	1.370	1.330	1.280	1.280	>1wk
Win Source		WS-FQA24N50	5,103	12				3.478	3.478	3.478	32m
Worldway Electronics		FQA24N50	27,530	7	Tube		2.177	2.074	2.074	2.074	23h

CAD Models

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Alternate Parts

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Datasheets & Documents

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Upverter

Technical Drawing1 page6 years ago

IHS

onsemi

Newark

Farnell

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1999-12-16

Lifecycle StatusObsolete (Last Updated: 5 days ago)

LTB Date2011-09-14

LTD Date2012-03-14

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)

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Descriptions

Descriptions of onsemi FQA24N50 provided by its distributors.

Power MOSFET, N-Channel, QFET®, 500 V, 24 A, 200 mΩ, TO-3P

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Vigor Components

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Jameco

MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:500V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:24A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:TO-3P; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Pulse Current Idm:96A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V

element14 APAC

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.

Fairchild Semiconductor