onsemi FOD817

Name: onsemi FOD817
Brand: onsemi
SKU: FOD817

70V 5000V 50mA 0.1V@1mA, 20mA 1 6V 1.2V DC PDIP-4 Optocouplers - Phototransistor Output ROHS

$ 0.084

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min
Avnet	4	FOD817	6,067	2K					0.071	1d
Newark	2	FOD817	3,130	1	0.412	0.285	0.203	0.153	0.124
Verical	5	FOD817	29	15			0.084	0.084	0.084
Arrow Electronics	2	FOD817	1,660	1	0.396	0.262	0.187	0.127	0.127
Master Electronics		FOD817	8,000	2K					0.118

Inventory History

3 month trend: -10.17%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FOD817.

IHS

Datasheet12 pages2 years ago

Datasheet0 pages0 years ago

Upverter

JRH Electronics

Farnell

onsemi

Inventory History

3 month trend:

-10.17%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiFOD817

onsemiH11A817300

Price @ 1000

$ 0.084

$ 0.132

Stock

515,799

67,441

Authorized Distributors

Case/Package

DIP

Number of Pins

Number of Channels

Isolation Voltage

5000 Vrms

Current Transfer Ratio

50 %

Rise Time

18 µs

Fall Time

18 µs

Output Voltage

70 V

Output Current

Forward Voltage

1.4 V

1.2 V

Forward Current

50 mA

Supply Chain

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FOD817 provided by its distributors.

70V 5000V 50mA 0.1V@1mA,20mA 1 6V 1.2V DC PDIP-4 Optocouplers - Phototransistor Output ROHS

Dasenic

DIP4 Through Hole Single Channel 70 V 5000 Vrms Phototransistor Optocoupler

Future Electronics

No. Of Channels:1 Channel; Optocoupler Case Style:Dip; No. Of Pins:4Pins; Forward Current If Max:50Ma; Isolation Voltage:5Kv; Ctr Min:50%; Collector Emitter Voltage V(Br)Ceo:70V; Product Range:-; Input Current:50Ma Rohs Compliant: Yes |Onsemi FOD817.

Newark

The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package..

Fairchild Semiconductor

Collector-Emitter Voltage (VCEO) Max. V = 70 / Collector Current Max. mA = 50 / Power Dissipation (Pd) mW = 150 / Reverse Voltage (Vr) V = 6 / Package Type = DIP-4 / Collector-Emitter Saturation Voltage Max. mV = 200 / Emitter−Collector Voltage (VECO) Max. V = 6 / Forward Voltage (Vf) Max. V = 1.2 / Output Type = Phototransistor / Isolation Voltage kV = 5 / Forward Current (If) Max. mA = 50 / Current Transfer Ratio (CTR) Min. % = 50 / Operating Temperature Max. °C = 110 / Operating Temperature Min. °C = -55 / Current Transfer Ratio (CTR) Max. % = 600 / Channels = 1

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