onsemi FGH80N60FD2TU
EOL
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-04-11
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2023-06-15
LTD Date2023-12-15
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
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Trench gate field-stop IGBT, V series 600 V, 60 A very high speed
Descriptions
Descriptions of onsemi FGH80N60FD2TU provided by its distributors.
Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 Tube
Using Novel Field Stop IGBT Technology, Fairchild's new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating applications where low conduction and switching losses are essential.
IGBT,N CH,W DIODE,600V,80A,TO247AD; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AD; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.39 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.8 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current80 A
Element ConfigurationSingle
Fall Time100 ns
Max Collector Current80 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation290 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation290 W
Reverse Recovery Time61 ns
Schedule B8541290080
Turn-Off Delay Time126 ns
Turn-On Delay Time21 ns
Dimensions
Height20.82 mm
Length15.87 mm
Width4.82 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements