onsemi FGA50N100BNTD2

Name: onsemi FGA50N100BNTD2
Brand: onsemi
SKU: FGA50N100BNTD2

Trans IGBT Chip N-CH 1KV 50A 3-Pin(3+Tab) TO-3P(N) Rail

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor	SKU		Min	Pkg
Farnell	FGA50N100BNTD2	0	1		5.000*	5.000*	5.000*	5.000*	5.000*	11h
Win Source	WS-FGA50N100BNTD2	3,000	6			10.948	7.299	7.299	7.299	12h
Worldway Electronics	FGA50N100BNTD2	24,616	7	Tube		3.323	3.261	3.135	3.135	6h
ZTZ Technology Limited	FGA50N100BNTD2	23,295			8.447	7.771	7.095	5.744	5.744	3d
SHENGYU ELECTRONICS	FGA50N100BNTD2	15,135	1		2.221	2.176	2.110	2.040	1.950	4d

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FGA50N100BNTD2.

IHS

Datasheet9 pages12 years ago

Datasheet0 pages0 years ago

onsemi

Factory Futures

Fairchild Semiconductor

iiiC

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2009-03-12

Lifecycle StatusObsolete (Last Updated: 3 days ago)

LTB Date2021-07-29

LTD Date2022-01-29

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

Related Parts

onsemiFGL60N100BNTDTU

FGL60N100BNTD Series 1000 V 60 A Through Hole NPT Trench IGBT - TO-264

Details

onsemiFGH25T120SMD-F155

Trans IGBT Chip N-CH 1200V 50A 428000mW 3-Pin(3+Tab) TO-247 Tube

Details

InfineonIRG7PH35UD-EP

1200V UltraFast Discrete IGBT in a TO-247 package with UltraFast Soft Recovery Diode

Details

InfineonIRG7PH35UDPBF

TUBE / 1200V Trench IGBT for Induction Cooking 50A COPAK-247 ;RoHS Compliant: Yes

Details

InfineonIRG7PH35UD1PBF

1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode

Details

onsemiHGTG18N120BND

Trans IGBT Chip N-CH 1200V 54A 390000mW 3-Pin(3+Tab) TO-247 Rail

Details

Descriptions

Descriptions of onsemi FGA50N100BNTD2 provided by its distributors.

Trans IGBT Chip N-CH 1KV 50A 3-Pin(3+Tab) TO-3P(N) Rail

Avnet

Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel

IHS

IGBT, SINGLE, 1KV, 50A, TO-3P; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 156W; Collector Emitter Voltage V(br)ceo: 1kV; Transistor Case Style: TO-3P; No. of Pins: 3Pin

Farnell

Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.

Fairchild Semiconductor