onsemi FDV301N

Name: onsemi FDV301N
Brand: onsemi
SKU: FDV301N

Transistor MOSFET N-Ch. 25V 220mA 0, 35W 4Ohm SOT23 FDV301N

$ 0.064

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Distributor		SKU		Min	Pkg
Future Electronics	2	FDV301N	3,630,000	3K	Tape & Reel					0.018
Avnet	2	FDV301N	864,146	16667							3d
Newark	2	FDV301N	14,878	1	Cut Tape	0.269	0.269	0.109	0.073	0.073
Verical	4	FDV301N	1,011,000	3K						0.030
Arrow Electronics	3	FDV301N	12,768	1		0.251	0.136	0.085	0.064	0.044

Inventory History

3 month trend: -10.45%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDV301N.

IHS

Datasheet5 pages0 years ago

Datasheet8 pages4 years ago

Upverter

Newark

onsemi

Farnell

Inventory History

3 month trend:

-10.45%

CAD Models

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Supply Chain

Country of OriginMainland China, Philippines

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1997-07-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDV301N provided by its distributors.

Transistor MOSFET N-Ch. 25V 220mA 0,35W 4Ohm SOT23 FDV301N

Rapid Electronics

MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 350 mW

Distrelec

This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values.

Fairchild Semiconductor

N CHANNEL MOSFET, 220MA, 25V, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:220mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:2.7V; Threshold Voltage Vgs Typ:850mV; Power Dissipation Pd:350mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:220mA; Current Temperature:25°C; ESD HBM:6kV; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Pd:350mW; Pulse Current Idm:500mA; SMD Marking:301; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:850mV; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1.5V

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