onsemi FCP360N65S3R0
$ 1.25
Production
Inventory History
3 month trend: -0.03%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
CAD Models
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 1.25
$ 1.395
Stock
310,757
299,613
Authorized Distributors
6
2
Mount
-
Through Hole
Case/Package
TO-220-3
TO-220
Drain to Source Voltage (Vdss)
650 V
600 V
Continuous Drain Current (ID)
10 A
9 A
Threshold Voltage
-
2 V
Rds On Max
-
385 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
83 W
83.3 W
Input Capacitance
-
1.24 nF
Supply Chain
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descriptions
Descriptions of onsemi FCP360N65S3R0 provided by its distributors.
N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 10 A, 360 mΩ, TO-220
MOSFET N-CH 650V 10A TO220-3 / N-Channel 650 V 10A (Tc) 83W (Tc) Through Hole TO-220-3
83W(Tc) 30V 4.5V@1mA 18nC@ 10 V 1N 650V 360m¦¸@ 5A,10V 10A 730pF@400V TO-220-3
Power Field-Effect Transistor, 10A I(D), 650V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -0.03%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-220-3
Number of Terminals3
Technical
Continuous Drain Current (ID)10 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance360 mΩ
Drain to Source Voltage (Vdss)650 V
Gate to Source Voltage (Vgs)30 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation83 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation83 W
Turn-Off Delay Time34 ns
Turn-On Delay Time12 ns
Dimensions
Height20.4 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
REACH SVHCNo
RoHSCompliant
Compliance Statements