onsemi FCP4N60

Name: onsemi FCP4N60
Brand: onsemi
SKU: FCP4N60

N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 3.9 A, 1.2 Ω, TO-220

$ 1.05

EOL

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	FCP4N60	6,909					1.260	1.050	0.932	19h
Farnell		FCP4N60	0	1		0.938*	0.775*	0.603*	0.603*	0.603*	19h
element14 APAC		FCP4N60	0	1		2.625*	2.078*	1.766*	1.289*	1.227*	1d
Microchip USA		FCP4N60	133	150	Tube				19.110	19.110	7d
Win Source		WS-FCP4N60	5,480	175					0.221	0.191	19h

Inventory History

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CAD Models

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Datasheets & Documents

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Datasheet0 pages0 years ago

IHS

onsemi

Fairchild Semiconductor

element14 APAC

Inventory History

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-02-28

Lifecycle StatusEOL (Last Updated: 3 days ago)

LTB Date2024-01-03

LTD Date2024-07-03

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

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Descriptions

Descriptions of onsemi FCP4N60 provided by its distributors.

N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 3.9 A, 1.2 Ω, TO-220

onsemi

Transistor: N-MOSFET; unipolar; 600V; 3.9A; 1.2ohm; 50W; -55+150 deg.C; THT; TO220

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Avnet

Power Field-Effect Transistor, 3.9A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:50mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:3.9A; Package / Case:TO-220; Power Dissipation Pd:50mW; Pulse Current Idm:11.7A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

element14 APAC

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Fairchild Semiconductor