onsemi FCP11N60

Name: onsemi FCP11N60
Brand: onsemi
SKU: FCP11N60

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, TO-220

$ 1.481

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor	SKU		Min	Pkg
Arrow Electronics	FCP11N60	15,890	1		1.255	1.255	1.255	1.255	1.255
Rochester Electronics	FCP11N60	172					1.430	1.280	1.210	15h
DigiKey	FCP11N60-ND	1,602	1	Tube	4.180	4.180	1.939	1.481	1.438
Newark	FCP11N60	0	150					2.220	2.220
Onlinecomponents.com	FCP11N60	0	250	Bulk				1.430	1.430

Inventory History

3 month trend: +0.84%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FCP11N60.

Newark

Datasheet0 pages0 years ago

Datasheet11 pages26 years ago

Datasheet10 pages22 years ago

Datasheet0 pages0 years ago

IHS

onsemi

Farnell

element14

Inventory History

3 month trend:

+0.84%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiFCP11N60

InfineonSPP11N60C3XKSA1

Price @ 1000

$ 1.481

$ 1.212

Stock

212,069

1,276,544

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

TO-220

Drain to Source Voltage (Vdss)

600 V

Continuous Drain Current (ID)

11 A

Threshold Voltage

5 V

Rds On Max

380 mΩ

Gate to Source Voltage (Vgs)

30 V

20 V

Power Dissipation

125 W

Input Capacitance

1.49 nF

1.2 nF

Supply Chain

Lifecycle StatusProduction (Last Updated: 1 day ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 1 day ago)

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Descriptions

Descriptions of onsemi FCP11N60 provided by its distributors.

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, TO-220

onsemi

N-Channel 600 V 0.38 O 125 W 52 nC Flange Mount SuperFET FRFET Mosfet - TO-220

Future Electronics

Trans MOSFET N-CH 600V 11A 3-Pin (3+Tab) TO-220AB Rail

Verical

Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:650V; On Resistance Rds(on):320mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Package / Case:TO-220; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:30A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V

element14 APAC

SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch-ing performance, dv/dt rate and higher avalanche energy. Con-sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Fairchild Semiconductor