onsemi 2N7002K

Name: onsemi 2N7002K
Brand: onsemi
SKU: 2N7002K

Mosfet N-ch 60V 300MA SOT23 / Trans Mosfet N-ch 60V 0.3A 3-PIN SOT-23 T/r

$ 0.077

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Avnet	3	2N7002K	765,000	3K						0.029	2d
Future Electronics	2	2N7002K	12,000	3K	Tape & Reel					0.039
Newark	3	2N7002K	2,117	1	Cut Tape	0.310	0.144	0.089	0.077	0.077
Verical	7	2N7002K	1,541	46				0.082	0.070	0.036
Arrow Electronics	4	2N7002K	25,501	1		0.177	0.060	0.054	0.047	0.042

Inventory History

3 month trend: +137%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi 2N7002K.

IHS

Datasheet7 pages2 years ago

Datasheet0 pages0 years ago

onsemi

Upverter

element14 APAC

Newark

Inventory History

3 month trend:

+137%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemi2N7002K

Vishay2N7002K-T1-GE3

Price @ 1000

$ 0.077

$ 0.074

Stock

6,762,460

14,711,211

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

115 mA

300 mA

Threshold Voltage

2.5 V

2 V

Rds On Max

2 Ω

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

300 mW

350 mW

Input Capacitance

50 pF

30 pF

Supply Chain

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi 2N7002K provided by its distributors.

MOSFET N-CH 60V 300MA SOT23 / Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R

Win Source

N-Channel 60 V 2 Ohm SMT Enhancement Mode Field Effect Transistor SOT-23

Future Electronics

Power MOSFET, N Channel, 60 V, 340 mA, 5 ohm, SOT-23, Surface Mount

EBV Elektronik

60V 310mA 1.6¦¸@10V,500mA 350mW 2.1V@250¦ÌA N Channel SOT-23(SOT-23-3) MOSFETs ROHS

Dasenic

Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

IHS

FETS - SINGLE; Transistor Polarity: N Channel; Continuous Drain Current Id: 300mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 35

Farnell

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 380 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 2.5 / Gate-Source Voltage V = 20 / Fall Time ns = 29 / Rise Time ns = 9 / Turn-OFF Delay Time ns = 55.8 / Turn-ON Delay Time ns = 12.2 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 420

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