NXP Semiconductors IRFZ24N
Obsolete
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.248
Stock
21,632
859,325
Authorized Distributors
0
6
Mount
Through Hole
Through Hole
Case/Package
-
TO-220AB
Drain to Source Voltage (Vdss)
-
55 V
Continuous Drain Current (ID)
17 A
17 A
Rds On Max
-
70 mΩ
Collector Emitter Breakdown Voltage
-
-
Max Collector Current
-
-
Transition Frequency
-
-
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-02-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2007-06-30
LTD Date2007-12-31
Descriptions
Descriptions of NXP Semiconductors IRFZ24N provided by its distributors.
Power Field-Effect Transistor, 17A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
17 A 55 V 0.07 ohm N-CHANNEL Si POWER MOSFET TO-220AB
N-channel enhancement mode TrenchMOS transistor
IRFZ24N PHILIPS
Manufacturer Aliases
NXP Semiconductors has several brands around the world that distributors may use as alternate names. NXP Semiconductors may also be known as the following names:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Technical Specifications
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)17 A
Current Rating17 A
Drain to Source Resistance70 mΩ
Element ConfigurationSingle
Fall Time27 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance370 pF
Max Operating Temperature175 °C
Max Power Dissipation45 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Rise Time34 ns
Turn-Off Delay Time19 ns
Turn-On Delay Time4.9 ns
Voltage Rating (DC)55 V
Dimensions
Height8.77 mm
Length10.54 mm
Width4.69 mm