Infineon IRFZ24NPBF
$ 0.272
Production
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Inventory History
3 month trend: -100%
CAD Models
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Alternate Parts
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CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-02-01
Lifecycle StatusProduction (Last Updated: 1 month ago)
Related Parts
Descriptions
Descriptions of Infineon IRFZ24NPBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.07Ohm;ID 17A;TO-220AB;PD 45W;VGS +/-20V
Transistor MOSFET N Channel 55 Volt 17 Amp 3 Pin 3+ Tab TO-220 AB
MOSFET N-CH 55V 17A TO-220AB / Trans MOSFET N-CH Si 55V 17A 3-Pin(3+Tab) TO-220AB Tube
Single N-Channel 55 V 0.07 Ohm 20 nC HEXFET® Power Mosfet - TO-220-3
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Transistor MOSFET N-Ch. 17A/55V TO220 IRFZ 24 NPBF
Power MOSFET, N Channel, 55 V, 17 A, 0.07 ohm, TO-220AB, Through Hole
HEXFET POWER MOSFET Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 55V, 17A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.07ohm; Rds(o; Available until stocks are exhausted Alternatives available
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:45W; No. Of Pins:3Pins; Msl:- Rohs Compliant: Yes |Infineon Technologies IRFZ24NPBF.
MOSFET, N, 55V, 17A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:17A; Resistance, Rds On:0.07ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:68A; Lead Spacing:2.54mm; No. of Pins:3; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation:45W; Power, Pd:45W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:3.3°C/W; Transistors, No. of:1; Voltage, Vds Max:55V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)17 A
Current Rating17 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time27 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance370 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation45 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance70 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation45 W
Rds On Max70 mΩ
Resistance70 mΩ
Rise Time34 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage2 V
Turn-Off Delay Time19 ns
Turn-On Delay Time4.9 ns
Voltage Rating (DC)55 V
Dimensions
Height19.8 mm
Lead Pitch2.54 mm
Length10.5156 mm
Width4.69 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements