Nexperia PSMN1R7-60BS,118

Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
$ 2.142
Production
Manufacturer PageDatasheet

Price and Stock

See all price breaks
DistributorSKUMinPkg
Arrow ElectronicsPSMN1R7-60BS,11840042
TME
2
PSMN1R7-60BS.1183691
2h
DigiKey
3
1727-7106-1-ND1,1471Cut Tape
NewarkPSMN1R7-60BS,11801
AvnetPSMN1R7-60BS,11804800
14h

Datasheets & Documents

Download datasheets and manufacturer documentation for Nexperia PSMN1R7-60BS,118.

IHS

Datasheet14 pages14 years ago

Future Electronics

TME

Inventory History

3 month trend:
-38.95%
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Alternate Parts

This Part
Alternate Parts
NexperiaPSMN1R7-60BS,118
InfineonIPB019N06L3GATMA1
Price @ 1000
$ 2.142
$ 2.06
Stock
537,935
1,340,463
Authorized Distributors
6
4
Mount
-
Surface Mount
Case/Package
SOT
TO-263
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
120 A
120 A
Threshold Voltage
-
1.7 V
Rds On Max
2 mΩ
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
306 W
250 W
Input Capacitance
9.997 nF
21 nF

Supply Chain

Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-02-29
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)

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Descriptions

Descriptions of Nexperia PSMN1R7-60BS,118 provided by its distributors.

Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
IHS
N-channel 60 V 2 mΩ standard level MOSFET in D2PAK
Nexperia
Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R
Verical
PSMN1R7 Series 60 V 2 mOhm SMT N-Channel Standard Level MOSFET - D2PAK-3
Future Electronics
MOSFET, N-CH, 60V, 120A,D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.00166ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Powe
Farnell
Mosfet, N Channel, 60V, 120A,d2Pak; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:120A; Tensión Drenaje-Fuente Vds:60V; Resistencia De Activación Rds(On):0.00166Ohm; Tensión Vgs De Medición Rds(On):10V |Nexperia PSMN1R7-60BS,118
Newark

Images

Nexperia
Farnell
element14 APAC
RS
TME
Future Electronics
Conrad
Rochester Electronics

Manufacturer Aliases

Nexperia has several brands around the world that distributors may use as alternate names. Nexperia may also be known as the following names:

  • Nexperia USA Inc
  • NEXPER
  • Nexperia BV
  • NXP/NEXPERIA
  • Nexperia USA
  • NEXP
  • Nexperi
  • NEXPERIA / NXP
  • Nexperia Inc
  • Nexperia/NXP Semiconductors
  • NEXPERIA(Nexperia)
  • NEXPERIA/NXP SEMICONDUCTOR
  • Nexperia(Ahn Se)
  • Nexperia Semiconductors Taiwan Ltd
  • NEXPERIA/N
  • NEXPERIA/PHILIPS
  • NEXPERIA USA INC (UA)
  • NEX-NXP
  • NEXPERIA USA INC (VA)
  • NEXPERIA (FORMERLY NXP) (4001801)

Part Number Aliases

This part may be known by these alternate part numbers:

  • PSMN1R7-60BS 118
  • PSMN1R7-60BS118