Nexperia PBRP113ET,215

Name: Nexperia PBRP113ET,215
Brand: Nexperia
SKU: PBRP113ET,215

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

$ 0.11

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Distributor		SKU		Min	Pkg
Newark		PBRP113ET,215	1,149	5	Cut Tape		0.305	0.191	0.124	0.124
DigiKey	2	1727-5712-1-ND	4,410	1	Cut Tape	0.290	0.174	0.109	0.071	0.071
TME	2	PBRP113ET.215	0	1		0.280	0.177	0.110	0.110	0.110	14h
Avnet		PBRP113ET,215	0	21K							18h
Farnell	2	PBRP113ET,215	1,149	5	Cut Tape		0.210*	0.131*	0.086*	0.086*	15h

Inventory History

3 month trend: +32.69%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Nexperia PBRP113ET,215.

Farnell

Datasheet13 pages5 years ago

IHS

Future Electronics

Newark

Inventory History

3 month trend:

+32.69%

Supply Chain

Lifecycle StatusProduction (Last Updated: 2 years ago)

Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)

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Descriptions

Descriptions of Nexperia PBRP113ET,215 provided by its distributors.

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

IHS

Trans Digital BJT PNP 40V 600mA Automotive 3-Pin TO-236AB T/R

Verical

One PNP - Pre-Biased 250mW 600mA 40V SOT-23 Digital Transistors ROHS

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750mV@ 6mA,600mA PNP - Pre-Biased 570W 500nA 40V 600mA TO-236AB 3mm*1.4mm*1mm

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600 mA 40 V PNP Si SMALL SIGNAL TRANSISTOR TO-236AB

Component Stockers USA

TRANSISTOR,PNP,W/RES,40V,0.8A,SOT23; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: -40V; Continuous Collector Current Ic: -800mA; Base Input Resistor R1: 1kohm; Base-Emitter Resistor R2: 1kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-23; No. of Pins: 3 Pin; Product Range: PBRP113E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); DC Collector Current: -600mA; DC Current Gain hFE: 210hFE; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 250mW; Transistor Case Style: SOT-23; Transistor Polarity: PNP

Farnell