Nexperia BSS84,215

Name: Nexperia BSS84,215
Brand: Nexperia
SKU: BSS84,215

Power MOSFET, P Channel, 50 V, 130 mA, 10 Ohm, SOT-23 (TO-236AB), 3 Pins, Surface Mount

$ 0.154

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Newark	2	BSS84,215	31	1	Cut Tape	0.523	0.319	0.202	0.202	0.202
Future Electronics	2	BSS84,215	18,000	3K	Tape & Reel					0.125
TME	2	BSS84.215	0	1		0.300	0.193	0.120	0.120	0.120	12h
Avnet		BSS84,215	0	3K							3d
Schukat		BSS84.215	0	500					0.237	0.164	15h

Inventory History

3 month trend: +68.58%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Nexperia BSS84,215.

Upverter

Technical Drawing5 pages7 years ago

Datasheet12 pages17 years ago

IHS

Newark

Farnell

iiiC

Inventory History

3 month trend:

+68.58%

CAD Models

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Alternate Parts

This Part

Alternate Parts

NexperiaBSS84,215

onsemiBSS84LT1G

Price @ 1000

$ 0.154

$ 0.076

Stock

1,816,052

26,334,093

Authorized Distributors

Mount

Case/Package

SOT

SOT-23

Drain to Source Voltage (Vdss)

-50 V

Continuous Drain Current (ID)

130 mA

Threshold Voltage

-2 V

Rds On Max

10 Ω

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

250 mW

225 mW

Input Capacitance

45 pF

30 pF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00

Introduction Date2008-12-22

Lifecycle StatusProduction (Last Updated: 2 years ago)

Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)

Descriptions

Descriptions of Nexperia BSS84,215 provided by its distributors.

Power MOSFET, P Channel, 50 V, 130 mA, 10 Ohm, SOT-23 (TO-236AB), 3 Pins, Surface Mount

EBV Elektronik

BSS84 Series 50 V 100 Ohm P-Channel Enhancement Mode D-MOS Transistor SOT-23

Future Electronics

Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

IHS

MOSFET, P CH, -50V, -130MA, SOT-23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-130mA; Drain Source Voltage Vds:-50V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:250mW; Operating Temperature Min:-65°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013)

Farnell

Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 130 / Drain-Source Voltage (Vds) V = 50 / ON Resistance (Rds(on)) mOhm = 6 / Gate-Source Voltage V = 20 / Turn-OFF Delay Time ns = 7 / Turn-ON Delay Time ns = 3 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 250

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