Nexperia 2N7002P,215

Name: Nexperia 2N7002P,215
Brand: Nexperia
SKU: 2N7002P,215

Transistor: N-MOSFET; unipolar; 60V; 360mA; 1.6ohm; 350mW; -55+150 deg.C; SMD; SOT23; AEC-Q100

$ 0.053

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

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Distributor		SKU		Min	Pkg
Newark	3	2N7002P,215	9,701	1	Cut Tape	0.392	0.249	0.188	0.188	0.188
TME	2	2N7002P.215	6,780	1		0.100	0.073	0.052	0.036	0.033	4h
Avnet		2N7002P,215	0	3K						0.031	8h
Future Electronics		2N7002P,215	0	3K	Tape & Reel					0.098
Arrow Electronics		2N7002P,215	0	3K						0.024

Inventory History

3 month trend: -17.33%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Nexperia 2N7002P,215.

IHS

Datasheet15 pages5 years ago

Datasheet15 pages15 years ago

TME

Inventory History

3 month trend:

-17.33%

CAD Models

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Alternate Parts

This Part

Alternate Parts

Nexperia2N7002P,215

Nexperia2N7002P,235

Price @ 1000

$ 0.053

$ 0.05

Stock

13,164,738

3,352,764

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

360 mA

Threshold Voltage

1.75 V

Rds On Max

1.6 Ω

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

420 mW

Input Capacitance

50 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.75

Introduction Date2010-07-29

Lifecycle StatusProduction (Last Updated: 2 years ago)

Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)

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Details

Descriptions

Descriptions of Nexperia 2N7002P,215 provided by its distributors.

Transistor: N-MOSFET; unipolar; 60V; 360mA; 1.6ohm; 350mW; -55+150 deg.C; SMD; SOT23; AEC-Q100

Maritex

Power MOSFET, N Channel, 60 V, 360 mA, 1.6 Ohm, SOT-23 (TO-236AB), 3 Pins, Surface Mount

Avnet

2N7002P Series N-Channel 60 V 1.6 Ohm 350 mW 0.8 nC SMT TrenchMOS FET - SOT-23

Future Electronics

MOSFET N-Channel 60V 360mA (Ta) 350mW (Ta) Surface Mount TO-236AB (SOT23)

Component Sense

60V 360mA 1.6´Î@10V500mA 350mW 2.4V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS

Dasenic

Transistor MOSFET N-CH 60V 0.36A 3-Pin TO-236AB T/R

Avnet Japan

Trans MOSFET N-CH 60V 0.36A Automotive 3-Pin SOT-23 T/R

Verical

Small Signal Field-Effect Transistor, 0.36A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Semicontronic

MOSFET,N CH,60V,0.36A,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:360mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.75V; Power Dissipation Pd:420mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-236AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

Farnell

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 360 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 1.6 / Gate-Source Voltage V = 20 / Fall Time ms = 5 / Rise Time ns = 4 / Turn-OFF Delay Time ns = 10 / Turn-ON Delay Time ns = 3 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 350

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