Infineon SPW21N50C3FKSA1

Name: Infineon SPW21N50C3FKSA1
Brand: Infineon
SKU: SPW21N50C3FKSA1

Trans MOSFET N-CH 500V 21A 3-Pin(3+Tab) TO-247 Tube

$ 1.7

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min
Rochester Electronics		SPW21N50C3FKSA1	1				1.900	1.700	1.600	23h
Farnell		SPW21N50C3FKSA1	0	1	5.296*	4.037*	3.305*	2.912*	2.912*	23h
Win Source	2	WS-SPW21N50C3FKSA1	11,540	26			1.817	1.523	1.523	1d
Worldway Electronics	2	SPW21N50C3	11,121	7		1.584	1.536	1.455	1.455	41m
IC Components Ltd.		SPW21N50C3	3,687		8.930	8.930	8.930	8.930	8.930	4d

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon SPW21N50C3FKSA1.

Newark

Datasheet12 pages21 years ago

element14 APAC

TME

iiiC

Farnell

Inventory History

3 month trend:

+0.00%

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-07-11

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2020-03-31

LTD Date2020-09-30

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Descriptions

Descriptions of Infineon SPW21N50C3FKSA1 provided by its distributors.

Trans MOSFET N-CH 500V 21A 3-Pin(3+Tab) TO-247 Tube

Verical

Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Semicontronic

MOSFET, N, 500V, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:500V; On Resistance Rds(on):190mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:208W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:21A; Package / Case:TO-247; Power Dissipation Pd:208W; Power Dissipation Pd:208W; Pulse Current Idm:63A; Termination Type:SMD; Voltage Vds:500V; Voltage Vds Typ:560V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC

Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

Infineon