Infineon SPP11N60CFDXKSA1

Name: Infineon SPP11N60CFDXKSA1
Brand: Infineon
SKU: SPP11N60CFDXKSA1

Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220 Tube

$ 1.313

EOL

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Distributor		SKU		Min	Pkg
Arrow Electronics		SPP11N60CFDXKSA1	800	500					1.243	1.243
Avnet		SPP11N60CFDXKSA1	0	500					1.297	1.277	16h
Mouser		726-SPP11N60CFDXKSA1	380	1	Tube	3.760	2.450	1.720	1.330	1.250
Microchip USA		SPP11N60CFDXKSA1	1,657	600	Tube				1.169	1.169	8h
Win Source	2	WS-SPP11N60CFD	224	19				2.407	2.086	2.086	14h

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CAD Models

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon SPP11N60CFDXKSA1.

IHS

Datasheet12 pages15 years ago

element14 APAC

Farnell

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-12-23

Lifecycle StatusEOL (Last Updated: 1 month ago)

LTB Date2026-09-30

LTD Date2027-03-31

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Descriptions

Descriptions of Infineon SPP11N60CFDXKSA1 provided by its distributors.

Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220 Tube

Verical

Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N, 600V, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:11A; Resistance, Rds On:0.44ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220; ;RoHS Compliant: Yes

Newark

MOSFET, N, 600V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):440mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Package / Case:TO-220; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:28A; Termination Type:Through Hole; Voltage Vds:600V; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation.Replacement for CoolMOS™ CFD is 600V CoolMOS™ CFD7Characteristics and applications of CoolMOS ™ CFD2Improved cost performance, light load efficiency and ease-of-use in EMI and low voltage overshoot. Soft switching resonant topologies with hard commutation requirements requiring a fast body diode.

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