Infineon SPA15N60C3XKSA1

Name: Infineon SPA15N60C3XKSA1
Brand: Infineon
SKU: SPA15N60C3XKSA1

Power MOSFET, N Channel, 650 V, 15 A, 0.25 ohm, TO-220F, Through Hole

$ 1.521

EOL

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Distributor		SKU		Min	Pkg
Newark		SPA15N60C3XKSA1	225	1		4.280	3.580	2.000	1.640	1.640
Arrow Electronics	2	SPA15N60C3XKSA1	500	1		1.521	1.521	1.521	1.521	1.521
Rochester Electronics		SPA15N60C3XKSA1	7,433					1.480	1.330	1.250	1d
DigiKey		SPA15N60C3XKSA1-ND	152	1	Tube	4.290	4.290	1.996	1.996	1.996
Future Electronics	2	SPA15N60C3XKSA1	0	50	Tube			1.120	1.090	1.060

Inventory History

3 month trend: -0.10%

CAD Models

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon SPA15N60C3XKSA1.

IHS

Datasheet14 pages0 years ago

Infineon SCT

element14 APAC

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Inventory History

3 month trend:

-0.10%

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-07-01

Lifecycle StatusEOL (Last Updated: 3 weeks ago)

LTB Date2026-09-30

LTD Date2027-03-31

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Descriptions

Descriptions of Infineon SPA15N60C3XKSA1 provided by its distributors.

Power MOSFET, N Channel, 650 V, 15 A, 0.25 ohm, TO-220F, Through Hole

EBV Elektronik

Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220FP Tube

Verical

34W 20V 3.9V 63nC@ 10V 1N 600V 280m¦¸@ 10V 15A 1.66nF@ 25V TO-220 10.65mm*4.85mm*16.15mm

UnikeyIC

Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

MOSFET, N, 600V, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:650V; On Resistance Rds(on):280mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:34W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:15A; Package / Case:TO-220F; Power Dissipation Pd:34W; Power Dissipation Pd:34W; Pulse Current Idm:45A; Termination Type:Through Hole; Voltage Vds:650V; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 15 / Drain-Source Voltage (Vds) V = 650 / ON Resistance (Rds(on)) mOhm = 280 / Gate-Source Voltage V = 20 / Fall Time ns = 5 / Rise Time ns = 5 / Turn-OFF Delay Time ns = 50 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 156

Distrelec

Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

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