Infineon SGP02N120XKSA1

Name: Infineon SGP02N120XKSA1
Brand: Infineon
SKU: SGP02N120XKSA1

Trans IGBT Chip N-CH 1200V 6.2A 62000mW 3-Pin(3+Tab) TO-220 Tube / IGBT 1200V 6.2A 62W TO220-3

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Microchip USA		SGP02N120XKSA1	391	50	Tube			68.374	68.374	68.374	13h
Weyland Electronics Group Pte. Ltd.		SGP02N120	10,970	1	Tape & Reel	15.025	15.025	15.025	15.025	15.025	20h
Win Source	2	WS-SGP02N120	10,970	2			22.059	19.118	19.118	19.118	20h
Worldway Electronics	2	SGP02N120XKSA1	13,536	7	Tube		1.374	1.349	1.297	1.271	19h
IC Components Ltd.		SGP02N120XKSA1	60,100			39.090	39.090	39.090	39.090	39.090	5d

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon SGP02N120XKSA1.

IHS

Datasheet13 pages18 years ago

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-03-20

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2016-06-30

LTD Date2016-12-31

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Descriptions

Descriptions of Infineon SGP02N120XKSA1 provided by its distributors.

Trans IGBT Chip N-CH 1200V 6.2A 62000mW 3-Pin(3+Tab) TO-220 Tube / IGBT 1200V 6.2A 62W TO220-3

Win Source

SGP02N120 Series 1200 V 6.2 A 62 W Through Hole NPT IGBT - PG-TO-220-3

Future Electronics

Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-220AB

IHS

Igbt Single Transistor, 6.2 A, 3.1 V, 62 W, 1.2 Kv, To-220, 3

Newark

IGBT, NPT, 1200V, 6.2A, 62W, TO220-3; Transistor Type:IGBT; DC Collector Current:6.2A; Collector Emitter Voltage Vces:3.1V; Power Dissipation Pd:62W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C; Pulsed Current Icm:9.6A; Rise Time:21ns

element14 APAC

Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies. | Summary of Features: 30% lower E off compared to previous generation; Short circuit withstand time 10s; Designed for operation above 30kHz; High ruggedness, temperature stable behaviour; Pb-free lead plating; RoHS compliant; Qualified according to JEDEC for target applications | Target Applications: Infineon offers a comprehensive IGBT portfolio for the general purpose inverters, solar inverters, UPS, induction heating, microwave oven, rice cookers, welding and SMPS segments.

Infineon