Infineon IKP10N60TXKSA1

Name: Infineon IKP10N60TXKSA1
Brand: Infineon
SKU: IKP10N60TXKSA1

Trans IGBT Chip N-CH 600V 24A 110mW Automotive 3-Pin(3+Tab) TO-220AB Tube

$ 0.668

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
Newark	IKP10N60TXKSA1	1,112	1		1.990	0.959	0.858	0.591	0.591
Arrow Electronics	IKP10N60TXKSA1	487	1		0.744	0.744	0.744	0.744	0.744
DigiKey	448-IKP10N60TXKSA1-ND	53	1	Tube	2.050	2.050	0.986	0.986	0.986
Avnet	IKP10N60TXKSA1	0	1K							14h
Farnell	IKP10N60TXKSA1	1,040	1		2.277*	1.100*	0.984*	0.679*	0.674*	11h

Inventory History

3 month trend: +0.68%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IKP10N60TXKSA1.

IHS

Datasheet13 pages10 years ago

element14 APAC

_legacy Avnet

TME

Farnell

Inventory History

3 month trend:

+0.68%

CAD Models

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Supply Chain

Country of OriginMainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-10-07

Lifecycle StatusObsolete (Last Updated: 1 week ago)

LTB Date2026-03-15

LTD Date2026-09-15

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Descriptions

Descriptions of Infineon IKP10N60TXKSA1 provided by its distributors.

Trans IGBT Chip N-CH 600V 24A 110mW Automotive 3-Pin(3+Tab) TO-220AB Tube

Verical

Infineon IKP10N60TXKSA1 IGBT Transistor Module, 24 A 600 V PG-TO-220-3

TodayComponents

600 V IGBT with anti-parallel diode in TO220 package, PG-TO220-3, RoHS

Infineon SCT

IGBT, General Purpose, 20 A, 2.05 V, 110 W, 600 V, TO-220, 3 Pins

EBV Elektronik

L LOSS DUOPACK: IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMCON HE DIODE Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB

ComSIT Distribution GmbH

IGBT, N, 600V, 10A, TO-220; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:110W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:10A; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:110W; Power Dissipation Pd:110W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

element14 APAC

Hard-switching 600 V, 10 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Infineon