Infineon IRS2101SPBF

Tube IRS2101SPBF High-Side or Low-Side 1996 gate driver 170ns -40C~150C TJ 290mA 600mA 625mW

Power MOSFET and IGBT Driver, High Voltage, High Speed, 600V, 8-pin SOIC, Tube

600 V high-side and low-side gate driver IC, SOIC 8N, RoHS

IRS2101 Series 600 V 290 mA 20 V Supply Dual High And Low Side Driver - SOIC-8

70ns 2 10V 220ns 20V 800mV,2.5V Non-Inverting IGBT,MOSFET,N 35ns , 290mA,600mA SOIC-8 1.5mm

MOSFET Driver IC; Device Type:High and Low Side; Supply Voltage Max:20V; Package/Case:8-SOIC; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; Fall Time, tf:35ns; High Side MOSFET Drive Type:Bootstrapped ;RoHS Compliant: Yes

600 V High and Low Side Driver IC with typical 0.29 A source and 0.6 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP. | Summary of Features: Floating gate driver designed for bootstrap operation; Fully operational to +600 V; Tolerant to negative transient voltage, dV/dt immune; Gate drive supply range from 10 V to 20 V; Undervoltage lockout; 3.3 V, 5 V, and 15 V logic input compatible; Matched propagation delay for both channels; Outputs in phase with inputs

IC, DRIVER, HIGH/LOW SIDE, SOIC8; Device Type:High Side / Low Side; Module Configuration:High Side / Low Side; Peak Output Current:600mA; Input Delay:160ns; Output Delay:150ns; Supply Voltage Range:10V to 20V; Driver Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; SVHC:No SVHC (19-Dec-2011); Base Number:2101; No. of Outputs:2; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:290mA; Output Current + Max:270mA; Output Sink Current Min:270mA; Output Source Current Min:130mA; Output Voltage:620V; Output Voltage Max:20V; Package / Case:SOIC; Power Dissipation Pd:0.625W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:SMD