Infineon IRLU3915PBF

Name: Infineon IRLU3915PBF
Brand: Infineon
SKU: IRLU3915PBF

IRLU3915PBF N-channel MOSFET Transistor, 61 A, 55 V, 3-Pin IPAK

$ 1.137

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Rochester Electronics		IRLU3915PBF	60					0.584	0.484	0.432	8h
RS (Formerly Allied Electronics)		IRLU3915PBF	0	15	Bulk			1.890	1.790	1.790	1d
Farnell		IRLU3915PBF	0	1		1.242*	1.134*	0.781*	0.537*	0.537*	7h
Win Source	2	WS-IRLU3915	749	60				1.010	0.673	0.673	9h
Worldway Electronics		IRLU3915PBF	11,075	7	Tube		0.160	0.155	0.147	0.147	8h

Inventory History

3 month trend: +0.00%

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLU3915PBF.

IHS

Datasheet11 pages15 years ago

Datasheet12 pages15 years ago

Factory Futures

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Newark

Inventory History

3 month trend:

+0.00%

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2002-09-06

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2009-02-11

LTD Date2009-08-11

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Descriptions

Descriptions of Infineon IRLU3915PBF provided by its distributors.

IRLU3915PBF N-channel MOSFET Transistor, 61 A, 55 V, 3-Pin IPAK

RS (Formerly Allied Electronics)

55V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 30A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

IHS

Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

Infineon

MOSFET, N, 55V, 61A, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:61A; Resistance, Rds On:0.014ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:I-PAK; ;RoHS Compliant: Yes

Newark

MOSFET, N, 55V, 61A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:55V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:120W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:61A; Junction to Case Thermal Resistance A:1.3°C/W; On State resistance @ Vgs = 10V:14mohm; Package / Case:IPAK; Power Dissipation Pd:120W; Power Dissipation Pd:120W; Pulse Current Idm:240A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:16V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V

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