Infineon IRFU4105ZPBF

Name: Infineon IRFU4105ZPBF
Brand: Infineon
SKU: IRFU4105ZPBF

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

$ 1.53

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRFU4105ZPBF	0	5	Bulk		1.700	1.530	1.530	1.530	4h
Farnell		IRFU4105ZPBF	0	1		1.445*	1.160*	0.831*	0.579*	0.568*	11h
Microchip USA		IRFU4105Z	248	3K	Tray					0.909	6h
Win Source	2	WS-IRFU4105ZPBF	20	60				0.873	0.582	0.582	13h
Worldway Electronics	2	IRFU4105ZPBF	16,046	7	Tube		0.519	0.503	0.477	0.477	12h

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFU4105ZPBF.

IHS

Datasheet11 pages15 years ago

Datasheet12 pages15 years ago

Datasheet12 pages21 years ago

element14 APAC

Newark

DigiKey

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-08-25

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2019-11-15

LTD Date2020-05-15

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Descriptions

Descriptions of Infineon IRFU4105ZPBF provided by its distributors.

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

Infineon

Single N-Channel 55 V 24.5 mOhm 18 nC HEXFET® Power Mosfet - IPAK

Future Electronics

Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A) | MOSFET N-CH 55V 30A I-PAK

Win Source

55V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 30A I(D), 55V, 0.0245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

IHS

MOSFET, N, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:30A; Resistance, Rds On:0.00245ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:I-PAK; Termination ;RoHS Compliant: Yes

Newark

MOSFET, N, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):24.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:48W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-251; Current Id Max:30A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Length:9.65mm; Lead Spacing:2.28mm; No. of Transistors:1; Package / Case:IPAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:120A; SMD Marking:IRFU4105ZPBF; Termination Type:Through Hole; Turn Off Time:26ns; Turn On Time:10ns; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC