Infineon IRLR3705ZTRPBF

Name: Infineon IRLR3705ZTRPBF
Brand: Infineon
SKU: IRLR3705ZTRPBF

Single N-Channel 55 V 12 mOhm 66 nC HEXFET® Power Mosfet - TO-252AA

$ 0.623

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet	2	42Y0442	50	1		2.280	1.460	0.990	0.789	0.789	3d
Newark		IRLR3705ZTRPBF	50	1	Cut Tape	0.247	0.247	0.247	0.247	0.247
Future Electronics	2	IRLR3705ZTRPBF	88,000	2K	Tape & Reel					0.490
Arrow Electronics	2	IRLR3705ZTRPBF	3,251	1		1.785	1.202	0.852	0.632	0.580
Rochester Electronics		IRLR3705ZTRPBF	1,280					0.651	0.541	0.482	14h

Inventory History

3 month trend: -44.26%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLR3705ZTRPBF.

IHS

Datasheet11 pages15 years ago

Newark

iiiC

Inventory History

3 month trend:

-44.26%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRLR3705ZTRPBF

InfineonAUIRLR3705Z

Price @ 1000

$ 0.623

$ 2.46

Stock

983,902

75,701

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

42 A

Threshold Voltage

3 V

Rds On Max

8 mΩ

Gate to Source Voltage (Vgs)

16 V

Power Dissipation

130 W

Input Capacitance

2.9 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-12-21

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRLR3705ZTRPBF provided by its distributors.

Single N-Channel 55 V 12 mOhm 66 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Semicontronic

MOSFET, N CH, 55V, 42A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 42A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 130W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 42 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 8 / Gate-Source Voltage V = 16 / Fall Time ns = 70 / Rise Time ns = 150 / Turn-OFF Delay Time ns = 33 / Turn-ON Delay Time ns = 17 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 130

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