onsemi FDD8453LZ-F085
$ 0.614
EOL
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2007-12-28
Lifecycle StatusEOL (Last Updated: 1 day ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)
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Descriptions
Descriptions of onsemi FDD8453LZ-F085 provided by its distributors.
N-Channel PowerTrench® MOSFET 40V, 50A, 6.5mΩ
40V, 50A, 6.7M Ohm, Nch Power Trench Mosfet / Tape Reel
Trans MOSFET N-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R
Power Field-Effect Transistor, 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)50 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance6.5 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.515 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation65 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation118 W
Rds On Max6.7 mΩ
Rise Time10 ns
Schedule B8541290080
Turn-Off Delay Time43 ns
Turn-On Delay Time12 ns
Dimensions
Height2.517 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
RatingsAEC-Q101
REACH SVHCNo
RoHSCompliant
Compliance Statements