Infineon IRLR3636PBF

Name: Infineon IRLR3636PBF
Brand: Infineon
SKU: IRLR3636PBF

Single N-Channel 60 V 6.8 mOhm 33 nC HEXFET® Power Mosfet - TO-252-3

$ 0.52

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor	SKU		Min	Pkg
Rochester Electronics	IRLR3636PBF	3				0.627	0.520	0.464	7h
RS (Formerly Allied Electronics)	IRLR3636PBF	0	600	Bulk			2.850	1.420	20h
Farnell	IRLR3636PBF	0	5		1.519*	1.107*	0.804*	0.788*	5h
Win Source	WS-IRLR3636PBF	16,720	100			0.520	0.403	0.403	8h
Worldway Electronics	IRLR3636PBF	14,080	7	Tube	0.123	0.120	0.113	0.113	1d

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLR3636PBF.

IHS

Datasheet11 pages17 years ago

Datasheet10 pages17 years ago

Farnell

iiiC

Inventory History

3 month trend:

+0.00%

CAD Models

Download Infineon IRLR3636PBF symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
Component Search Engine	SymbolFootprint		Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Alternate Parts

This Part

Alternate Parts

InfineonIRLR3636PBF

InfineonIRLR3636TRPBF

Price @ 1000

$ 0.52

$ 0.718

Stock

510,194

628,804

Authorized Distributors

Mount

Surface Mount

Case/Package

TO-252-3

DPAK

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

99 A

50 A

Threshold Voltage

2.5 V

Rds On Max

6.8 mΩ

Gate to Source Voltage (Vgs)

16 V

Power Dissipation

143 W

Input Capacitance

3.779 nF

Supply Chain

Lifecycle StatusObsolete (Last Updated: 4 months ago)

Related Parts

InfineonIRLR3636TRPBF

Single N-Channel 60 V 8.3 mOhm 49 nC HEXFET® Power Mosfet - TO-252-3

Details

InfineonIRLR3705ZTRPBF

Single N-Channel 55 V 12 mOhm 66 nC HEXFET® Power Mosfet - TO-252AA

Details

InfineonAUIRFR1018E

Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D-Pak Package

Details

VishaySQD40N06-14L_GE3

Mosfet Transistor, N Channel, 40 A, 60 V, 0.011 Ohm, 10 V, 2 V Rohs Compliant: Yes |Vishay SQD40N06-14L-GE3

Details

Descriptions

Descriptions of Infineon IRLR3636PBF provided by its distributors.

Single N-Channel 60 V 6.8 mOhm 33 nC HEXFET® Power Mosfet - TO-252-3

Future Electronics

MOSFET, 60V, 99A, 6.8 MOHM, 33 NC QG, LOGIC LEVEL, D-PAK

RS (Formerly Allied Electronics)

60V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 99A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

MOSFET, N-CH 60V 50A DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):6.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:143W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:99A; Package / Case:D-PAK; Power Dissipation Pd:143W; Power Dissipation Pd:143W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:60V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon