Infineon IRLR3636TRPBF

Name: Infineon IRLR3636TRPBF
Brand: Infineon
SKU: IRLR3636TRPBF

Single N-Channel 60 V 8.3 mOhm 49 nC HEXFET® Power Mosfet - TO-252-3

$ 0.718

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Newark	2	IRLR3636TRPBF	12	1	Cut Tape	0.214	0.214	0.214	0.214	0.214
Future Electronics	2	IRLR3636TRPBF	36,000	2K	Tape & Reel					0.655
Arrow Electronics	4	IRLR3636TRPBF	4,252	1		1.941	1.356	0.966	0.640	0.640
Rochester Electronics		IRLR3636TRPBF	1,000					0.865	0.718	0.640	6h
DigiKey	3	IRLR3636TRPBFCT-ND	23,587	1	Cut Tape	2.460	1.580	1.075	0.790	0.790

Inventory History

3 month trend: -2.51%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLR3636TRPBF.

Newark

Datasheet11 pages17 years ago

IHS

Future Electronics

iiiC

Inventory History

3 month trend:

-2.51%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRLR3636TRPBF

InfineonIRLR3636TRLPBF

Price @ 1000

$ 0.718

$ 0.758

Stock

689,254

159,196

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

50 A

Threshold Voltage

2.5 V

Rds On Max

6.8 mΩ

Gate to Source Voltage (Vgs)

16 V

Power Dissipation

143 W

Input Capacitance

3.779 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-02-06

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Details

Descriptions

Descriptions of Infineon IRLR3636TRPBF provided by its distributors.

Single N-Channel 60 V 8.3 mOhm 49 nC HEXFET® Power Mosfet - TO-252-3

Future Electronics

60V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power MOSFET, N Channel, 60 V, 50 A, 0.0054 ohm, TO-252AA, Surface Mount

Avnet

Power Field-Effect Transistor, 50A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

MOSFET, N-CH, 60V, 50A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0054ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V;

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon