Infineon IRLML6346TRPBF

Name: Infineon IRLML6346TRPBF
Brand: Infineon
SKU: IRLML6346TRPBF

MOSFET Transistor, N Channel, 3.4 A, 30 V, 0.046 ohm, 4.5 V, 800 mV

$ 0.133

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Distributor		SKU		Min	Pkg
Newark	2	IRLML6346TRPBF	1,263	1	Cut Tape	0.468	0.297	0.197	0.140	0.140
Future Electronics	2	IRLML6346TRPBF	225,000	3K	Tape & Reel					0.069
Arrow Electronics		IRLML6346TRPBF	52,999	1		0.451	0.276	0.173	0.113	0.067
Rochester Electronics		IRLML6346TRPBF	844					0.086	0.071	0.063	10h
DigiKey	3	IRLML6346TRPBFCT-ND	85,519	1	Cut Tape	0.470	0.288	0.182	0.121	0.121

Inventory History

3 month trend: +8.35%

CAD Models

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Alternate Parts

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Datasheets & Documents

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IHS

Datasheet11 pages14 years ago

element14 APAC

Upverter

Newark

iiiC

Inventory History

3 month trend:

+8.35%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2010-10-28

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

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Descriptions

Descriptions of Infineon IRLML6346TRPBF provided by its distributors.

MOSFET Transistor, N Channel, 3.4 A, 30 V, 0.046 ohm, 4.5 V, 800 mV

Newark

30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

Infineon SCT

Single N-Channel 30 V 80 mOhm 2.9 nC HEXFET® Power Mosfet - SOT-23

Future Electronics

MOSFET N-CH 30V 3.4A SOT23 / Trans MOSFET N-CH 30V 3.4A 3-Pin SOT-23 T/R

Win Source

Power MOSFET, N Channel, 30 V, 3.4 A, 0.046 ohm, SOT-23, Surface Mount

Avnet

MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W

Distrelec

Power Field-Effect Transistor, 3.4A I(D), 30V, 0.063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

ComSIT Distribution GmbH

MOSFET,N CH,30V,3.3A,SOT23; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.046ohm; Rds(on) Test Voltage Vgs:4.5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:3.4A; Power Dissipation Pd:1.3W; Voltage Vgs Max:12V

Farnell

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon