Infineon IRLML9301TRPBF

Name: Infineon IRLML9301TRPBF
Brand: Infineon
SKU: IRLML9301TRPBF

Transistor: P-MOSFET; unipolar; -30V; -3.6A; 0.064ohm; 1.3W; -55+150 deg.C; SMD; SOT23

$ 0.126

EOL

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Distributor		SKU		Min	Pkg
Avnet	2	IRLML9301TRPBF	6,000	3K						0.058	3d
Newark		IRLML9301TRPBF	18,360	1	Cut Tape	0.520	0.309	0.223	0.160	0.160
Future Electronics	2	IRLML9301TRPBF	906,000	3K	Tape & Reel					0.072
Arrow Electronics	4	IRLML9301TRPBF	46,338	1		0.470	0.265	0.181	0.121	0.085
Rutronik		TMOSS6819	3,000	3K						0.081	19h

Inventory History

3 month trend: +1.57%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLML9301TRPBF.

Newark

Datasheet11 pages14 years ago

element14 APAC

iiiC

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

+1.57%

CAD Models

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Supply Chain

Country of OriginIsrael, Mainland China, Philippines, Thailand

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2010-05-27

Lifecycle StatusEOL (Last Updated: 1 month ago)

LTB Date2026-06-30

LTD Date2027-12-31

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Descriptions

Descriptions of Infineon IRLML9301TRPBF provided by its distributors.

Transistor: P-MOSFET; unipolar; -30V; -3.6A; 0.064ohm; 1.3W; -55+150 deg.C; SMD; SOT23

Maritex

-30V Single P-Channel HEXFET Power MOSFET in a Micro3 package, SOT23-3, RoHS

Infineon SCT

Trans MOSFET P-CH 30V 3.6A 3-Pin SOT-23 T/R / MOSFET P-CH 30V 3.6A SOT-23-3

Win Source

Power MOSFET, P Channel, 30 V, 3.6 A, 0.064 ohm, SOT-23, Surface Mount

Avnet

MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Power dissipation: 1.3 W

Distrelec

Power Field-Effect Transistor, 3.6A I(D), 30V, 0.064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Semicontronic

P Channel, MOSFET, -30V, -3.6 A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.6A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.064ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.3V ;RoHS Compliant: Yes

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon