Infineon IRL530NSTRLPBF

Name: Infineon IRL530NSTRLPBF
Brand: Infineon
SKU: IRL530NSTRLPBF

MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.1Ohm; ID 17A; D2Pak; PD 79W; VGS +/-20V; Qg 34

$ 0.589

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Distributor		SKU		Min	Pkg
Newark	2	IRL530NSTRLPBF	1,306	1	Cut Tape	2.160	1.440	1.030	0.956	0.956
Arrow Electronics	3	IRL530NSTRLPBF	1,374	1		1.703	1.153	0.707	0.597	0.597
Rutronik		TMOS1244	800	800					0.448	0.359	9h
DigiKey	3	IRL530NSTRLPBFCT-ND	30,815	1	Cut Tape	2.140	1.365	0.922	0.922	0.922
Avnet		IRL530NSTRLPBF	0	800					0.467	0.446	4d

Inventory History

3 month trend: -10.28%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRL530NSTRLPBF.

Newark

Datasheet12 pages21 years ago

Datasheet11 pages21 years ago

Datasheet11 pages28 years ago

RS (Formerly Allied Electronics)

Jameco

iiiC

DigiKey

Inventory History

3 month trend:

-10.28%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1998-01-01

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRL530NSTRLPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.1Ohm;ID 17A;D2Pak;PD 79W;VGS +/-20V;Qg 34

RS (Formerly Allied Electronics)

Power MOSFET, N Channel, 100 V, 17 A, 0.1 ohm, TO-263 (D2PAK), Surface Mount

Avnet

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Single N-Channel 100 V 0.15 Ohm 34 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

Trans MOSFET N-CH 100V 17A 3-Pin (2+Tab) D2PAK T/R

Verical

IRL530NSTRLPBF,MOSFET, 100V, 1 7A, 100 MOHM, 22.7 NC QG, LOG

Jameco

Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

Infineon

Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:17A; On Resistance Rds(On):0.1Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; No. Of Pins:3Pinsrohs Compliant: Yes

Newark

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 17 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 100 / Gate-Source Voltage V = 20 / Fall Time ns = 26 / Rise Time ns = 53 / Turn-OFF Delay Time ns = 30 / Turn-ON Delay Time ns = 7.2 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = D2PAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 79

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