Infineon IRL530NSPBF

Name: Infineon IRL530NSPBF
Brand: Infineon
SKU: IRL530NSPBF

MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.1Ohm; ID 17A; D2Pak; PD 79W; VGS +/-20V; Qg 34

$ 1.22

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	IRL530NSPBF	140					1.400	1.160	1.040	5h
RS (Formerly Allied Electronics)		IRL530NSPBF	0	950	Bulk				1.280	1.280	18h
Farnell		IRL530NSPBF	0	1		1.452*	1.452*	1.057*	0.788*	0.788*	4h
Win Source		WS-IRL530NSPBF	20	60				0.855	0.570	0.570	5h
Worldway Electronics		IRL530NSPBF	9,435	7	Tube		0.314	0.304	0.288	0.288	4h

Inventory History

3 month trend: +0.00%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRL530NSPBF.

IHS

Datasheet12 pages21 years ago

Datasheet11 pages21 years ago

Newark

RS (Formerly Allied Electronics)

DigiKey

Inventory History

3 month trend:

+0.00%

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1998-01-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

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Descriptions

Descriptions of Infineon IRL530NSPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.1Ohm;ID 17A;D2Pak;PD 79W;VGS +/-20V;Qg 34

RS (Formerly Allied Electronics)

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 100V 17A 3-Pin(2+Tab) D2PAK

Avnet

HEXFET Power MOSFET Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

Infineon

MOSFET, N, 100V, 17A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:100V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:79W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:17A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.9°C/W; Package / Case:D2-PAK; Power Dissipation Pd:79W; Power Dissipation Pd:79W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:60A; SMD Marking:L530NS; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

element14 APAC

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 17 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 100 / Gate-Source Voltage V = 20 / Fall Time ns = 26 / Rise Time ns = 53 / Turn-OFF Delay Time ns = 30 / Turn-ON Delay Time ns = 7.2 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 3.8

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