Infineon IRG4RC10KDTRPBF

IRG4RC10K Series 600 V 9 A Surface Mount UltraFast Speed IGBT - TO-252AA
$ 0.988
Obsolete
Manufacturer PageDatasheet

Price and Stock

See all price breaks
DistributorSKUMinPkg
Rochester ElectronicsIRG4RC10KDTRPBF3,561
23h
RS (Formerly Allied Electronics)IRG4RC10KDTRPBF02KBulk
15h
FarnellIRG4RC10KDTRPBF01
9h
Win SourceWS-IRG4RC10KDTRPBF5,33475
1d
Worldway ElectronicsIRG4RC10KDTRPBF17,1497Tape & Reel
23h

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRG4RC10KDTRPBF.

IHS

Datasheet12 pages22 years ago

Newark

iiiC

Inventory History

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Alternate Parts

This Part
Alternate Parts
InfineonIRG4RC10KDTRPBF
InfineonIRG4RC10KDPBF
Price @ 1000
$ 0.988
$ 3.09
Stock
61,848
215,224
Authorized Distributors
3
1
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Collector Emitter Breakdown Voltage
600 V
600 V
Max Collector Current
9 A
9 A
Power Dissipation
38 W
38 W
Collector Emitter Saturation Voltage
2.39 V
2.62 V
Reverse Recovery Time
28 ns
28 ns

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-06-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-06-30
LTD Date2020-12-31

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Infineon IRG4RC10UDPBF IGBT, 8.5 A 600 V, 3-Pin DPAK (TO-252), Surface Mount
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InfineonIRG4RC10UTRPBF
Trans IGBT Chip N-CH 600V 8.5A 3-Pin(2+Tab) DPAK T/R
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600V UltraFast 8-60 kHz Discrete IGBT in a D-Pak package
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Trench gate field-stop IGBT, H series 600 V, 5 A high speed
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Descriptions

Descriptions of Infineon IRG4RC10KDTRPBF provided by its distributors.

IRG4RC10K Series 600 V 9 A Surface Mount UltraFast Speed IGBT - TO-252AA
Future Electronics
Trans IGBT Chip N-CH 600V 9A 38000mW 3-Pin(2+Tab) DPAK T/R
Verical
Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA
IHS
IGBT, N-CHANNEL, 600V, 8.5A, D-PAK TO-252AA
RS (Formerly Allied Electronics)
SHORT CIRCUIT RATED ULTRAFAST IG
ODG (Origin Data Global)
IGBT, COPAK, D-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:9A; Voltage, Vce Sat Max:2.39V; Power Dissipation:38W; Case Style:D-PAK; Termination Type:SMD; Alternate Case Style:TO-252; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:18A; Power, Pd:38W; Time, Rise:24ns
Farnell

Images

TME
TME
iiiC
Newark
Rochester Electronics

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IRFIRG4RC10KDTRPBF
  • IRG4RC10KDTRPBF.