Infineon IRG4PSC71KPBF

Name: Infineon IRG4PSC71KPBF
Brand: Infineon
SKU: IRG4PSC71KPBF

Trans IGBT Chip N-CH 600V 85A 350000mW 3-Pin(3+Tab) TO-274AA Tube

$ 4.6

Obsolete

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	IRG4PSC71KPBF	24					5.140	4.600	4.330	21h
RS (Formerly Allied Electronics)		IRG4PSC71KPBF	0	1	Bulk	20.520	18.460	18.460	18.460	18.460	14h
Farnell		IRG4PSC71KPBF	0	1		11.623*	11.623*	8.021*	7.613*	7.613*	22h
Microchip USA	2	IRG4PSC71K	317	600	Tray				4.540	4.540	14h
Win Source	2	WS-462501	8,850	14				3.250	2.914	2.914	22h

Inventory History

3 month trend: +0.00%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRG4PSC71KPBF.

IHS

Datasheet8 pages21 years ago

iiiC

Inventory History

3 month trend:

+0.00%

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1998-01-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-06-30

LTD Date2018-12-31

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Descriptions

Descriptions of Infineon IRG4PSC71KPBF provided by its distributors.

Trans IGBT Chip N-CH 600V 85A 350000mW 3-Pin(3+Tab) TO-274AA Tube

Verical

Bulk Through Hole N-CHANNEL Single IGBT Transistor 2.3V @ 15V 60A 200A 350W 54ns

Fly-Wing Technology

600V UltraFast 8-25 kHz Discrete IGBT in a TO-274AA package

International Rectifier

Insulated Gate Bipolar Transistor, 85A I(C), 600V V(BR)CES, N-Channel, TO-274AA

IHS

IRG4PSC71K Series 600 V 60 A Insulated Gate Bipolar Transistor - TO-247

Future Electronics

Igbt Discretes Rohs Compliant: Yes

Newark

Target Applications: Refridgeration

Infineon

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V,Vce(on)typ.=1.83V, @Vge=15V, Ic=60A) | IGBT 600V 85A 350W SUPER247

Win Source

IGBT, 600V, 85A, TO-274AA; DC Collector Current:85A; Collector Emitter Voltage Vces:2.3V; Power Dissipation Pd:350W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:Super-247; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Ic Continuous a Max:85A; Current Temperature:25°C; Fall Time Max:133ns; Fall Time tf:133ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:Super-247; Power Dissipation Max:350W; Power Dissipation Pd:350W; Pulsed Current Icm:200A; Rise Time:54ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

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