Infineon IRFZ44VPBF

MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 16.5 Milliohms;ID 55A;TO-220AB;PD 115W;-55de

Single N-Channel 60 V 16.5 mOhm 67 nC HEXFET® Power Mosfet - TO-220-3

60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Trans MOSFET N-CH 60V 55A 3-Pin(3+Tab) TO-220AB

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 115 W

HEXFET POWER MOSFET Power Field-Effect Transistor, 55A I(D), 60V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

N Channel Mosfet, 60V, 55A To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:55A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRFZ44VPBF.

MOSFET, N, 60V, 55A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:60V; On Resistance Rds(on):16.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:115W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:55A; Junction to Case Thermal Resistance A:1.3°C/W; Package / Case:TO-220AB; Power Dissipation Pd:115W; Power Dissipation Pd:115W; Pulse Current Idm:220A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V