Infineon IRFB3806PBF

Name: Infineon IRFB3806PBF
Brand: Infineon
SKU: IRFB3806PBF

Single N-Channel 60 V 15.8 mOhm 22 nC HEXFET® Power Mosfet - TO-220-3

$ 0.749

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Arrow Electronics	3	IRFB3806PBF	2,108	1		0.982	0.866	0.866	0.754	0.754
Rochester Electronics	2	IRFB3806PBF	5,418					0.623	0.517	0.461	6h
RS (Formerly Allied Electronics)		IRFB3806PBF	0	5	Bulk		1.110	0.980	0.980	0.980	22h
Farnell		IRFB3806PBF	0	1		0.967*	0.916*	0.708*	0.554*	0.506*	5h
Mouser		942-IRFB3806PBF	2,427	1	Tube	2.140	1.340	1.150	0.990	0.526

Inventory History

3 month trend: -3.45%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFB3806PBF.

Newark

Datasheet12 pages18 years ago

IHS

iiiC

Inventory History

3 month trend:

-3.45%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-02-29

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRFB3806PBF provided by its distributors.

Single N-Channel 60 V 15.8 mOhm 22 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

Infineon Technologies N channel HEXFET power MOSFET, 60 V, 43 A, TO-220, IRFB3806PBF

Burklin Elektronik

Trans MOSFET N-CH 60V 43A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 60V 43A TO-220AB

Win Source

60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

MOSFET, 60V, 43A, 16.2 MOHM, 22 NC QG, TO-220AB

RS (Formerly Allied Electronics)

Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12.6mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:71W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:43A; Package / Case:TO-220AB; Power Dissipation Pd:71W; Pulse Current Idm:170A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

The IR MOSFET™ family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. The optimized gate drive options enables designers the flexibility of selecting super, logic or normal level drives.

Infineon