Infineon IRFS3107-7PPBF

Name: Infineon IRFS3107-7PPBF
Brand: Infineon
SKU: IRFS3107-7PPBF

Single N-Channel 75 V 2.6 mOhm 240 nC HEXFET® Power Mosfet - D2PAK-7

$ 9.27

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFS3107-7PPBF	0	200	Bulk				9.270	9.270	23h
Farnell	IRFS3107-7PPBF	0	1		7.546*	5.908*	5.142*	3.759*	3.759*	9h
Microchip USA	IRFS3107-7PPBF	238	600	Tube				2.595	2.595	6d
Win Source	WS-IRFS3107-7PPBF	23,261	12				3.642	3.265	3.265	10h
Worldway Electronics	IRFS3107-7PPBF	18,369	7	Tube		3.161	3.065	2.903	2.903	9h

CAD Models

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Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFS3107-7PPBF.

IHS

Datasheet10 pages12 years ago

Datasheet9 pages12 years ago

element14 APAC

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Alternate Parts

This Part

Alternate Parts

InfineonIRFS3107-7PPBF

InfineonAUIRFS3107-7TRL

Price @ 1000

$ 9.27

$ 4.288

Stock

113,952

53,935

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

75 V

Continuous Drain Current (ID)

240 A

Threshold Voltage

4 V

Rds On Max

2.6 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

370 W

Input Capacitance

9.2 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-10-07

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRFS3107-7PPBF provided by its distributors.

Single N-Channel 75 V 2.6 mOhm 240 nC HEXFET® Power Mosfet - D2PAK-7

Future Electronics

75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-Pin package, D2PAK7P, RoHS

Infineon SCT

MOSFET Operating temperature: -55...175 °C Housing type: D2PAK-7 Polarity: N Power dissipation: 370 W

Distrelec

Trans MOSFET N-CH 75V 260A 7-Pin(6+Tab) D2PAK Tube

Avnet

MOSFET, 75V, 260A, 2.6 MOHM, 160 NC QG,D2PAK-7

RS (Formerly Allied Electronics)

Power Field-Effect Transistor, 260A I(D), 75V, 0.0026ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB

IHS

MOSFET, N-CH, 75V, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:260A; Drain Source Voltage Vds:75V; On Resistance Rds(on):2.1mohm; Rds(on) Test Voltage Vgs:20V; Power Dissipation Pd:370W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:9200pF; Current Id Max:260A; Package / Case:D2-PAK; Power Dissipation Pd:370W; Power Dissipation Pd:370W; Pulse Current Idm:1060A; Reverse Recovery Time trr Typ:52ns; Termination Type:SMD; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

element14 APAC

Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive

Infineon