Infineon IRFS3107TRL7PP

Name: Infineon IRFS3107TRL7PP
Brand: Infineon
SKU: IRFS3107TRL7PP

N CH POWER MOSFET. HEXFET, 75V, 260A, D2PAK; Transistor Polarity: N Channel; Cont

$ 2.378

EOL

Datasheet

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Distributor

SKU

Min

Pkg

Bulk Pricing

Rochester Electronics

USD

USD

Cut Tape

USD

800

Tape & Reel

USD

800

USD

1.913

1.827

Inventory History

3 month trend: -7.48%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFS3107TRL7PP.

Farnell

Datasheet10 pages12 years ago

Future Electronics

Newark

Inventory History

3 month trend:

-7.48%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2021-04-28

Lifecycle StatusEOL (Last Updated: 3 months ago)

LTB Date2026-09-30

LTD Date2027-03-31

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Descriptions

Descriptions of Infineon IRFS3107TRL7PP provided by its distributors.

N CH POWER MOSFET. HEXFET, 75V, 260A, D2PAK; Transistor Polarity:N Channel; Cont

Newark

75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-Pin package, D2PAK7P, RoHS

Infineon SCT

Power MOSFET, N Channel, 75 V, 260 A, 0.0026 ohm, TO-263 (D2PAK), Surface Mount

Avnet

Single N-Channel 75 V 2.6 mOhm 160 nC HEXFET® Power Mosfet - D2PAK-7

Future Electronics

Trans MOSFET N-CH 75V 260A 7-Pin(6+Tab) D2PAK T/R

Verical

MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Variants: Enhancement mode Power dissipation: 370 W

Distrelec

Power Field-Effect Transistor, 260A I(D), 75V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB

IHS

Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive

Infineon

MOSFET, N-CH, 75V, 260A, TO-263-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 260A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 370W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)

Farnell