Infineon IRFR6215TRPBF

Name: Infineon IRFR6215TRPBF
Brand: Infineon
SKU: IRFR6215TRPBF

Mosfet, Power; P-ch; Vdss -150V; Rds(on) 0.295 Ohm; Id -13A; D-pak (TO-252AA); Pd 110W

$ 0.646

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Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Avnet		IRFR6215TRPBF	2,000	2K						0.432	5d
Newark	2	IRFR6215TRPBF	9,885	1	Cut Tape	2.160	1.450	1.020	0.800	0.800
Future Electronics	2	IRFR6215TRPBF	24,000	2K	Tape & Reel					0.515
Arrow Electronics	4	IRFR6215TRPBF	4,200	1		1.549	1.044	0.809	0.594	0.500
Rutronik		TMOSP12353	4,000	2K						0.362	2h

Inventory History

3 month trend: -1.82%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFR6215TRPBF.

IHS

Datasheet11 pages9 years ago

Newark

RS (Formerly Allied Electronics)

Jameco

element14

Inventory History

3 month trend:

-1.82%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2004-03-04

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRFR6215TRPBF provided by its distributors.

MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.295Ohm;ID -13A;D-Pak (TO-252AA);PD 110W

RS (Formerly Allied Electronics)

Single P-Channel 150 V 0.58 Ohm 66 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

IRFR6215TRPBF,MOSFET, P-CHANNE L, -150V, 13A, 580 MOHM, 44 N

Jameco

-150V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power MOSFET, P Channel, 150 V, 13 A, 0.295 ohm, TO-252AA, Surface Mount

EBV Elektronik

Power Field-Effect Transistor, 13A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

MOSFET,P CH,150V,13A,DPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-13A; Drain Source Voltage Vds:-150V; On Resistance Rds(on):295mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252AA; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-13A; Power Dissipation Pd:110W; Voltage Vgs Max:-20V

element14 APAC

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon