Infineon IRFR6215PBF

Name: Infineon IRFR6215PBF
Brand: Infineon
SKU: IRFR6215PBF

Mosfet, Power; P-ch; Vdss -150V; Rds(on) 0.295 Ohm; Id -13A; D-pak (TO-252AA); Pd 110W

$ 2.08

Obsolete

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFR6215PBF	0	900	Bulk				2.080	1.220	10h
Farnell	IRFR6215PBF	0	1		1.651*	1.318*	0.953*	0.665*	0.651*	18h
Win Source	WS-IRFR6215PBF	23,550	85				0.613	0.477	0.477	19h
Worldway Electronics	IRFR6215PBF	14,961	7	Tube		0.186	0.180	0.171	0.171	18h
Aztech	IRFR6215PBF	765			16.240	16.240	16.240	16.240	16.240	14h

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFR6215PBF.

IHS

Datasheet11 pages9 years ago

Datasheet11 pages21 years ago

Upverter

Newark

RS (Formerly Allied Electronics)

iiiC

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-03-04

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRFR6215PBF provided by its distributors.

MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.295Ohm;ID -13A;D-Pak (TO-252AA);PD 110W

RS (Formerly Allied Electronics)

Single P-Channel 150 V 0.295 Ohm 66 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

-150V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

HEXFET POWER MOSFET Power Field-Effect Transistor, 13A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

Infineon

MOSFET, P, -150V, 13A, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:150V; On Resistance Rds(on):295mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:110W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:-13A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:1.4°C/W; Package / Case:DPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:44A; SMD Marking:IRFR6215; Termination Type:SMD; Voltage Vds:150V; Voltage Vds Typ:-150V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V

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