Infineon IRFIZ34NPBF

Name: Infineon IRFIZ34NPBF
Brand: Infineon
SKU: IRFIZ34NPBF

55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHS

$ 1.671

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Arrow Electronics		IRFIZ34NPBF	55	1		1.140	0.891	0.791	0.791	0.791
RS (Formerly Allied Electronics)		IRFIZ34NPBF	0	1	Bulk	2.890	2.550	2.550	2.550	2.550	5h
Win Source	2	WS-IRFIZ34N	8,900	35				1.380	1.122	1.122	16h
Worldway Electronics	2	IRFIZ34N	19,200	7			1.772	1.738	1.671	1.638	15h
Esaler Electronic		IRFIZ34NPBF	2,000			0.681	0.675	0.669	0.663	0.657	6h

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFIZ34NPBF.

Farnell

Datasheet10 pages9 years ago

Newark

IHS

DigiKey

iiiC

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-08-25

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2011-04-25

LTD Date2011-10-25

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Descriptions

Descriptions of Infineon IRFIZ34NPBF provided by its distributors.

55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHS

Infineon SCT

Single N-Channel 55 V 0.04 Ohm 34 nC HEXFET® Power Mosfet - TO-220-3FP

Future Electronics

Power Field-Effect Transistor, 21A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Abacus Technologies

MOSFET, 55V, 19A, 40 MOHM, 22.7 NC QG, TO-220 FULLPACK

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 55V 21A 3-Pin(3+Tab) TO-220 Full-Pack

Avnet

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 37 W

Distrelec

MOSFET, N, 55V, 19A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:55V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:20V; Power Dissipation Pd:31W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:21A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2.5kV; Junction to Case Thermal Resistance A:4.1°C/W; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Pd:31W; Power Dissipation Pd:31W; Pulse Current Idm:100A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon