Infineon IRFB4410PBF

Name: Infineon IRFB4410PBF
Brand: Infineon
SKU: IRFB4410PBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 8 Milliohms; Id 88A; TO-220AB; Pd 200W; Vf 1.3V

$ 0.917

EOL

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Newark		IRFB4410PBF	3,965	1		2.710	1.340	1.210	0.938	0.938
Rochester Electronics	2	IRFB4410PBF	142					1.080	0.896	0.799	21h
Arrow Electronics	3	IRFB4410PBF	23,530	1		0.853	0.764	0.743	0.670	0.667
DigiKey		IRFB4410PBF-ND	1,615	1	Tube	3.390	3.390	1.502	1.115	0.898
Avnet		IRFB4410PBF	0	3K						0.741	2d

Inventory History

3 month trend: -12.43%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFB4410PBF.

IHS

Datasheet12 pages19 years ago

Datasheet13 pages12 years ago

Newark

TME

RS (Formerly Allied Electronics)

Jameco

Inventory History

3 month trend:

-12.43%

CAD Models

Download Infineon IRFB4410PBF symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
Component Search Engine	SymbolFootprint	3D	Download
EE Concierge	SymbolFootprint
SnapEDA	Footprint	3D	Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Alternate Parts

This Part

Alternate Parts

InfineonIRFB4410PBF

InfineonAUIRFB4410

Price @ 1000

$ 0.917

$ 0.38

Stock

289,737

153,451

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

75 A

Threshold Voltage

4 V

2 V

Rds On Max

10 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

200 W

Input Capacitance

5.15 nF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-10-13

Lifecycle StatusEOL (Last Updated: 1 month ago)

LTB Date2008-03-13

LTD Date2008-09-13

Related Parts

InfineonIRFB4410ZPBF

IRFB4410ZPBF N-channel MOSFET Transistor, 97 A, 100 V, 3-Pin TO-220AB

Details

onsemiFDP3632

Transistor MOSFET Negative Channel 100 Volt 12A 3-Pin(3+Tab) TO-220AB Tube

Details

InfineonIRF8010PBF

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 12Milliohms;ID 80A;TO-220AB;PD 260W;-55deg

Details

InfineonIRFB3607PBF

MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.34 Milliohms;ID 80A;TO-220AB;PD 140W;-55de

Details

onsemiHUF75545P3

FAIRCHILD HUF75545P3 N-CHANNEL MOSFET TRANSISTOR, 75 A, 55 V, 3-PIN TO-220AB

Details

onsemiFDP060AN08A0

N-Channel PowerTrench® MOSFET 75V, 80A, 6mΩ

Details

Descriptions

Descriptions of Infineon IRFB4410PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 8 Milliohms;ID 88A;TO-220AB;PD 200W;VF 1.3V

RS (Formerly Allied Electronics)

Single N-Channel 100 V 10 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Trans MOSFET N-CH 100V 88A 3-Pin(3+Tab) TO-220AB

Avnet

Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 8200pF 630volts U2J +/-5%

Utmel Electronic

HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:96A; On Resistance Rds(On):0.008Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: Yes

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon

MOSFET, N, 100V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:96A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:250W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Avalanche Single Pulse Energy Eas:220mJ; Capacitance Ciss Typ:5150pF; Current Id Max:88A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:10mohm; Package / Case:TO-220; Pin Configuration:a; Pin Format:1G, (2+Tab)D, 3S; Power Dissipation Pd:250W; Power Dissipation Pd:250W; Power Dissipation Ptot Max:250W; Pulse Current Idm:380A; Reverse Recovery Time trr Typ:38ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

element14 APAC