Infineon IRFB4410PBF
Mosfet, Power; N-ch; Vdss 100V; Rds(on) 8 Milliohms; Id 88A; TO-220AB; Pd 200W; Vf 1.3V
$ 0.953
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Inventory History
3 month trend: -21.66%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.953
$ 0.38
Stock
376,426
223,652
Authorized Distributors
6
1
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
75 A
75 A
Threshold Voltage
4 V
2 V
Rds On Max
10 mΩ
10 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
200 W
200 W
Input Capacitance
5.15 nF
5.15 nF
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-10-13
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2008-03-13
LTD Date2008-09-13
Related Parts
InfineonIRF8010PBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 12Milliohms;ID 80A;TO-220AB;PD 260W;-55deg
InfineonIRFB3607PBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.34 Milliohms;ID 80A;TO-220AB;PD 140W;-55de
Descriptions
Descriptions of Infineon IRFB4410PBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 8 Milliohms;ID 88A;TO-220AB;PD 200W;VF 1.3V
MOSFET N-CH 100V 96A TO220AB N-Channel 100 V 96A (Tc) 250W (Tc) Through Hole TO-220AB
Infineon Technologies N channel HEXFET power MOSFET, 100 V, 88 A, TO-220, IRFB4410PBF
Single N-Channel 100 V 10 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Infineon NChannelMOSTube, Vds=100 V, 88 A, D2PAKencapsulation, A printed circuit board
Trans MOSFET N-CH 100V 88A 3-Pin(3+Tab) TO-220AB
Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 8200pF 630volts U2J +/-5%
HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:96A; On Resistance Rds(On):0.008Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
MOSFET, N, 100V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:96A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:250W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Avalanche Single Pulse Energy Eas:220mJ; Capacitance Ciss Typ:5150pF; Current Id Max:88A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:10mohm; Package / Case:TO-220; Pin Configuration:a; Pin Format:1G, (2+Tab)D, 3S; Power Dissipation Pd:250W; Power Dissipation Pd:250W; Power Dissipation Ptot Max:250W; Pulse Current Idm:380A; Reverse Recovery Time trr Typ:38ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -21.66%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Current Rating96 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance10 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time50 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.15 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance10 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation200 W
Rds On Max10 mΩ
Resistance10 mΩ
Reverse Recovery Time38 ns
Rise Time80 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time55 ns
Turn-On Delay Time24 ns
Voltage Rating (DC)100 V
Dimensions
Height19.8 mm
Lead Pitch2.54 mm
Length10.6426 mm
Width4.82 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements