Infineon IRFB4229PBF

IRFB4229PBF N-channel MOSFET Transistor, 46 A, 250 V, 3-Pin TO-220AB

250V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB package, TO220-3, RoHS

MOSFET N-CH 250V 46A TO220AB N-Channel 250 V 46A (Tc) 330W (Tc) Through Hole TO-220AB

Trans MOSFET N-CH 250V 46A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 250V 46A TO-220AB

Single N-Channel 250 V 46 mOhm 72 nC HEXFET® Power Mosfet - TO-220-3

Power MOSFET, N Channel, 250 V, 46 A, 0.038 ohm, TO-220AB, Through Hole

Infineon NChannelMOSTube, Vds=250 V, 46 A, TO-220ABencapsulation, Through hole mounting

Power Field-Effect Transistor, 46A I(D), 250V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N, 250V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:46A; Drain Source Voltage Vds:250V; On Resistance Rds(on):46mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:330W; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4229; Current Id Max:46A; N-channel Gate Charge:72nC; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330mW; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.