Infineon IRFB3306PBF

IRFB3306PBF N-channel MOSFET Transistor, 160 A, 60 V, 3-Pin TO-220AB

MOSFET N-CH 60V 120A TO-220AB / Trans MOSFET N-CH Si 60V 160A 3-Pin(3+Tab) TO-220AB Tube

Infineon Technologies N channel HEXFET power MOSFET, 60 V, 120 A, TO-220, IRFB3306PBF

Single N-Channel 60 V 4.2 mOhm 85 nC HEXFET® Power Mosfet - TO-220-3

60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Power MOSFET, N Channel, 60 V, 160 A, 0.0042 ohm, TO-220AB, Through Hole

Infineon N-Channel HEXFET MOSFET Vds=60V 160A TO-220AB TH 3-Pin

Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N, 60V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:60V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:230W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3306; Current Id Max:120A; N-channel Gate Charge:85nC; Package / Case:TO-220AB; Power Dissipation Pd:230W; Power Dissipation Pd:230mW; Pulse Current Idm:620A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.