Infineon IRF1010EPBF

Name: Infineon IRF1010EPBF
Brand: Infineon
SKU: IRF1010EPBF

MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 12 Milliohms; ID 84A; TO-220AB; PD 200W; gFS 69S

$ 0.548

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Distributor		SKU		Min	Pkg
Avnet	2	IRF1010EPBF	865	50				0.497	0.474	0.474	4d
Newark	2	IRF1010EPBF.	865	50				0.901	0.668	0.668
Future Electronics	2	IRF1010EPBF	300	50	Tube			0.585	0.570	0.525
Arrow Electronics	3	IRF1010EPBF	9,765	1		0.951	0.951	0.807	0.530	0.520
Rochester Electronics		IRF1010EPBF	1,175					0.771	0.640	0.570	20h

Inventory History

3 month trend: +7.70%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF1010EPBF.

Farnell

Datasheet8 pages15 years ago

Datasheet9 pages25 years ago

Newark

IHS

DigiKey

iiiC

Inventory History

3 month trend:

+7.70%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1997-08-06

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

LTB Date2014-01-09

LTD Date2014-07-09

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Descriptions

Descriptions of Infineon IRF1010EPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 12 Milliohms;ID 84A;TO-220AB;PD 200W;gFS 69S

RS (Formerly Allied Electronics)

Single N-Channel 60 V 12 mOhm 130 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Power MOSFET, N Channel, 60 V, 81 A, 0.012 ohm, TO-220AB, Through Hole

Avnet

Trans MOSFET N-CH 60V 84A 3-Pin(3+Tab) TO-220AB

Verical

Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

N Channel Mosfet, 60V, 84A To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:84A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRF1010EPBF.

Newark

The IR MOSFET™ family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 84 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 12 / Gate-Source Voltage V = 20 / Fall Time ns = 53 / Rise Time ns = 78 / Turn-OFF Delay Time ns = 48 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 200

Distrelec

MOSFET, N, 60V, 81A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:81A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:84A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.9°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:12mohm; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:330A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

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