Infineon IRFB23N15DPBF
Single N-Channel 150 V 0.09 Ohm 37 nC HEXFET® Power Mosfet - TO-220-3
$ 1.131
Obsolete
Price and Stock
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SKU
Min
Pkg
Bulk Pricing
Inventory History
3 month trend: -0.96%
CAD Models
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Alternate Parts
0 parts available
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-04-17
Lifecycle StatusObsolete (Last Updated: 3 months ago)
LTB Date2020-10-31
LTD Date2021-04-30
Related Parts
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Power MOSFET(Vdss=150V, Rds(on)max=0.056ohm, Id=33A) | MOSFET N-CH 150V 33A TO-220AB
InfineonIRFB41N15DPBF
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.045Ohm;ID 41A;TO-220AB;PD 200W;VGS +/-30V
Descriptions
Descriptions of Infineon IRFB23N15DPBF provided by its distributors.
Single N-Channel 150 V 0.09 Ohm 37 nC HEXFET® Power Mosfet - TO-220-3
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
MOSFET, 150V, 23A, 90 mOhm, 37 nC Qg, TO-220AB
Trans MOSFET N-CH 150V 23A 3-Pin(3+Tab) TO-220AB
Infineon N-Channel MOSFET HEXFET Vds=150V 23A TO-220AB TH 3-Pin
MOSFET N-CH 150V 23A TO220AB "N-Channel 150 V 23A (Tc) 3.8W (Ta), 136W (Tc) Through Hole TO-220AB"
SMPS MOSFET Power Field-Effect Transistor, 23A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:23A; On Resistance, Rds(on):90mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -0.96%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)23 A
Current Rating23 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance90 mΩ
Drain to Source Voltage (Vdss)150 V
Dual Supply Voltage150 V
Element ConfigurationSingle
Fall Time8.4 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.2 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation136 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs5.5 V
Number of Channels1
Number of Elements1
On-State Resistance90 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation3.8 W
Rds On Max90 mΩ
Resistance90 mΩ
Rise Time32 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage5.5 V
Turn-Off Delay Time18 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)150 V
Dimensions
Height19.3 mm
Length10.5156 mm
Width4.69 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements