Infineon IRF7854PBF

Name: Infineon IRF7854PBF
Brand: Infineon
SKU: IRF7854PBF

MOSFET, N Ch., 80V, 10A, 13.4 MOHM, 27 NC QG, SO-8, Pb-Free

Production

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Price and Stock

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRF7854PBF	0	3800	Bulk					1.793	1d
Farnell	2	IRF7854PBF	0	1	Cut Tape	1.388*	1.388*	0.716*	0.558*	0.558*	1d
Win Source		WS-IRF7854PBF	40,000	90				0.573	0.382	0.382	9h
Worldway Electronics		IRF7854PBF	15,708	7	Tube		0.564	0.547	0.518	0.518	8h
Aztech		IRF7854PBF	662			5.600	5.600	5.600	5.600	5.600	4h

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7854PBF.

IHS

Datasheet9 pages20 years ago

Datasheet8 pages20 years ago

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CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2021-04-28

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRF7854PBF provided by its distributors.

MOSFET, N Ch., 80V, 10A, 13.4 MOHM, 27 NC QG, SO-8, Pb-Free

RS (Formerly Allied Electronics)

80V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package

International Rectifier

Trans MOSFET N-CH 80V 10A 8-Pin SOIC Tube

Verical

HEXFET POWER MOSFET Power Field-Effect Transistor, 10A I(D), 80V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET, N, 80V, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:80V; On Resistance Rds(on):13.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.9V; Power Dissipation Pd:79mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Base Number:7854; Current Id Max:10A; Output Current Max:2.5A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:79mW; Pulse Current Idm:79A; Termination Type:SMD; Voltage Vds Typ:80V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

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