Infineon IRF7493PBF

Name: Infineon IRF7493PBF
Brand: Infineon
SKU: IRF7493PBF

Mosfet, Power; N-ch; Vdss 80V; Rds(on) 11.5 Milliohms; Id 9.3A; SO-8; Pd 2.5W; Vgs +/-2

$ 0.91

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF7493PBF	0	5	Bulk		1.040	0.910	0.910	0.910	4h
Farnell	IRF7493PBF	0	1		1.121*	1.041*	0.833*	0.694*	0.694*	12h
Sensible Micro	IRF7493PBF	1,657					6.548	6.063	6.063	7d
Win Source	WS-IRF7493PBF	19,740	85				0.613	0.477	0.477	13h
Worldway Electronics	IRF7493PBF	16,022	7	Tube		0.154	0.149	0.141	0.141	12h

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7493PBF.

element14 APAC

Datasheet9 pages21 years ago

IHS

TME

RS (Formerly Allied Electronics)

Jameco

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-03-25

Lifecycle StatusObsolete (Last Updated: 4 months ago)

Related Parts

InfineonIRF7854PBF

MOSFET, N Ch., 80V, 10A, 13.4 MOHM, 27 NC QG, SO-8, Pb-Free

Details

onsemiFDS3572

N-Channel 80 V 16 mOhm 2.5 W Surface Mount PowerTrench MosFet - SOIC-8

Details

InfineonIRF7495PBF

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 18Milliohms;ID 7.3A;SO-8;PD 2.5W;VGS +/-20

Details

InfineonIRF7855PBF

IRF7855PBF N-channel MOSFET Transistor,12 A, 60 V, 8-Pin SOIC

Details

onsemiFDS5672

In a Pack of 5, N-Channel MOSFET, 12 A, 60 V, 8-Pin SOIC ON Semiconductor FDS5672

Details

InfineonIRF7853PBF

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14.4 Milliohms;ID 8.3A;SO-8;PD 2.5W;gFS 11S

Details

Descriptions

Descriptions of Infineon IRF7493PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 11.5 Milliohms;ID 9.3A;SO-8;PD 2.5W;VGS +/-2

RS (Formerly Allied Electronics)

Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 1500pF 630volts U2J +/-5%

Utmel Electronic

Power Field-Effect Transistor, 9.3A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Load Switch High Side

Infineon

MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:80V; On Resistance Rds(on):15mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.3A; Fall Time tf:12ns; No. of Transistors:1; Package / Case:SOIC; Pin Configuration:(1+2+3)S,4G, (8+7+6+5)D; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:74A; Rise Time:7.5ns; Termination Type:SMD; Voltage Vds Typ:80V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC