Infineon IRF7507TRPBF

Name: Infineon IRF7507TRPBF
Brand: Infineon
SKU: IRF7507TRPBF

20V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 8 package

$ 0.6

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRF7507TRPBF	0	1	Bulk	0.680	0.600	0.600	0.600	0.600	1d
Farnell	3	IRF7507	0	1		0.712*	0.712*	0.712*	0.712*	0.712*	12h
Weyland Electronics Group Pte. Ltd.		IRF7507TRPBF	15,000	1	Tape & Reel	24.039	24.039	24.039	24.039	24.039	13h
Win Source	2	WS-IRF7507	6,000	1		64.522	43.015	43.015	43.015	43.015	13h
Worldway Electronics	2	IRF7507TRPBF	16,337	7	Tape & Reel		0.216	0.210	0.199	0.199	12h

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7507TRPBF.

IHS

Datasheet8 pages21 years ago

Datasheet8 pages27 years ago

Datasheet8 pages21 years ago

iiiC

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Alternate Parts

This Part

Alternate Parts

InfineonIRF7507TRPBF

Price @ 1000

$ 0.6

Stock

528,238

Authorized Distributors

Mount

Surface Mount

Case/Package

MSOP

Drain to Source Voltage (Vdss)

20 V

Continuous Drain Current (ID)

2.4 A

Threshold Voltage

700 mV

Rds On Max

140 mΩ

Gate to Source Voltage (Vgs)

12 V

Power Dissipation

1.25 W

Input Capacitance

260 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2005-02-21

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRF7507TRPBF provided by its distributors.

20V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 8 package

International Rectifier

Power Field-Effect Transistor, 2.4A I(D), 20V, 0.14ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8, SOIC-8

SHENGYU ELECTRONICS

MOSFET; Transistor Type:MOSFET; Package/Case:8-uSOIC; Power Dissipation, Pd:1.25W; Drain-Source Breakdown Voltage:20V; Thermal Resistance, Junction-Case:100°C/W; No. of Pins:8 ;RoHS Compliant: Yes

Newark

MOSFET, DUAL NP LOGIC MICRO-8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 2.4A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.135ohm; Rds(on) Test Voltage Vgs: 2.7V; Threshold Voltage Vgs: -;

Farnell

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon