Infineon IRF7509TRPBF

30V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 8 package, MICRO8, RoHS

Power Field-Effect Transistor, 2.7A I(D), 30V, 0.11ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

MOSFET, NP; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):110mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.25W; Transistor Case Style:µSOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Cont Current Id N Channel:2.7A; Cont Current Id P Channel:2A; Current Id Max:2.7A; On State Resistance @ Vgs = 10V N Channel:900mohm; On State Resistance @ Vgs = 10V P Channel:170mohm; On State Resistance @ Vgs = 4.5V N Channel:140mohm; On State Resistance @ Vgs = 4.5V P Channel:300mohm; Package / Case:Micro8; Power Dissipation Pd:1.25W; Pulse Current Idm N Channel:21A; Pulse Current Idm P Channel:16A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds N Channel:10V; Voltage Vgs Rds P Channel:10V; Voltage Vgs Rds on Measurement:10V

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Transistor Polarity = N-Channel / Transistor Polarity = P-Channel / Configuration = Dual / Drain-Source Voltage (Vds) V = 30 / Gate-Source Voltage V = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = Micro8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 240 / Power Dissipation (Pd) W = 1.25