Infineon IRF7807ZPBF

Name: Infineon IRF7807ZPBF
Brand: Infineon
SKU: IRF7807ZPBF

IRF7807ZPBF N-channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC

Obsolete

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF7807ZPBF	0	3800	Bulk					1.019	6h
Farnell	IRF7807ZPBF	0	1		0.767*	0.767*	0.434*	0.292*	0.292*	14h
Win Source	WS-IRF7807ZPBF	20	80				0.664	0.442	0.442	15h
Worldway Electronics	IRF7807ZPBF	14,293	7	Tube		0.320	0.311	0.294	0.294	14h
ICPartonline	IRF7807ZPBF	35,271			21.000	19.950	18.900	17.850	16.800	>1wk

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7807ZPBF.

Newark

Datasheet10 pages19 years ago

IHS

element14

Jameco

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-06-23

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

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Descriptions

Descriptions of Infineon IRF7807ZPBF provided by its distributors.

IRF7807ZPBF N-channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC

RS (Formerly Allied Electronics)

Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:11A; On Resistance, Rds(on):13.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

Newark

MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):13.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:88A; Row Pitch:6.3mm; SMD Marking:IRF7807ZPBF; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC